Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR186DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 60A PPAK SO-8
Product Attributes：
Part Number: SIR186DP-T1-RE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 60A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR186DP-T1-RE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
THERMISTOR NTC 100KOHM 4190K LUG
DIODE GEN PURP 200V 30A DO203AB
FIXED IND 100UH 133MA 4.5 OHM TH
LCD MODULE 40 DIG 20 X 2 PASSIVE
DIODE ARRAY SCHOTTKY 100V D2PAK
MOSFET P-CH 30V 11A PPAK SO-8
Product Specifications：
MfrPart.: SIR186DP-T1-RE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 60A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 4.5mOhm @ 15A, 10VVgs(th)(Max)@Id: 3.6V @ 250µAGateCharge(Qg)(Max)@Vgs: 37 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1710 pF @ 30 VFETFeature: -PowerDissipation(Max): 57W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR186DP-T1-RE3 | Vishay | NHE Electronics
SIR186DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
