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    SIR188LDP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, N-CHANNEL 60-V (D-S) MOSFET POWE
    SIR188LDP-T1-RE3 Images
    SIR188LDP-T1-RE3 Images
    Product Attributes：
  • Part Number: SIR188LDP-T1-RE3
  • Manufacturer: Vishay
  • Description: N-CHANNEL 60-V (D-S) MOSFET POWE
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • SIR188LDP-T1-RE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SIR188LDP-T1-RE3
  • Mfr: Vishay Siliconix
  • Description: N-CHANNEL 60-V (D-S) MOSFET POWE
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET® Gen IV
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 60 V
  • Current-ContinuousDrain(Id)@25°C: 25.8A (Ta), 93.6A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
  • RdsOn(Max)@IdVgs: 3.75mOhm @ 15A, 10V
  • Vgs(th)(Max)@Id: 2.5V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 52 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 2300 pF @ 30 V
  • FETFeature: -
  • PowerDissipation(Max): 5W (Ta), 65.7W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PowerPAK® SO-8
  • SIR188LDP-T1-RE3 | Vishay | NHE Electronics
    • SIR188LDP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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