Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR418DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 40A PPAK SO-8
Product Attributes：
Part Number: SIR418DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 40A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR418DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 600V 1.5A DO204AL
TVS DIODE 30VWM 53.5VC DO204AC
FIXED IND 220NH 1.4A 100 MOHM TH
SFERNICE POTENTIOMETERS & TRIMME
DIODE ZENER 6.8V 500MW SOD80
TRIMMER 2K OHM 0.5W PC PIN TOP
Product Specifications：
MfrPart.: SIR418DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 40A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 40A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 5mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 75 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2410 pF @ 20 VFETFeature: -PowerDissipation(Max): 39W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR418DP-T1-GE3 | Vishay | NHE Electronics
SIR418DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
