Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR578DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, N-CHANNEL 150 V (D-S) MOSFET POW
Product Attributes：
Part Number: SIR578DP-T1-RE3
Manufacturer: Vishay
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR578DP-T1-RE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
THERM NTC 100KOHM 4100K 0805
DIODE ZENER 6V 225MW SOT23-3
DIODE ZENER 3V 300MW SOT23-3
NTC CU 0.6 LD CODED 22K 5%
TVS DIODE 20VWM 32.4VC DO214AA
FIXED IND 4.7UH 3.1A 50 MOHM TH
Product Specifications：
MfrPart.: SIR578DP-T1-RE3Mfr: Vishay SiliconixDescription: N-CHANNEL 150 V (D-S) MOSFET POWProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen VPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 150 VCurrent-ContinuousDrain(Id)@25°C: 17.2A (Ta), 70.2A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10VRdsOn(Max)@IdVgs: 8.8mOhm @ 20A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 45 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2540 pF @ 75 VFETFeature: -PowerDissipation(Max): 6.25W (Ta), 104W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR578DP-T1-RE3 | Vishay | NHE Electronics
SIR578DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
