Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR610DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 200V 35.4A PPAK SO-8
Product Attributes：
Part Number: SIR610DP-T1-RE3
Manufacturer: Vishay
Description: MOSFET N-CH 200V 35.4A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR610DP-T1-RE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 90VWM 146VC DO214AB
DIODE ARRAY SCHOTTKY 35V D2PAK
DIODE ZENER 3.3V 500MW SOD123
MOSFET P-CH 12V 6A 1206-8
TVS DIODE 51VWM 82.4VC DO215AB
FIXED IND 33UH 185MA 3.5 OHM TH
Product Specifications：
MfrPart.: SIR610DP-T1-RE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 200V 35.4A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: ThunderFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 200 VCurrent-ContinuousDrain(Id)@25°C: 35.4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10VRdsOn(Max)@IdVgs: 31.9mOhm @ 10A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 38 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1380 pF @ 100 VFETFeature: -PowerDissipation(Max): 104W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR610DP-T1-RE3 | Vishay | NHE Electronics
SIR610DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
