Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR696DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 125V 60A PPAK SO-8
Product Attributes：
Part Number: SIR696DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 125V 60A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR696DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 27UH 4.8A 40 MOHM TH
DIODE SCHOTTKY 60V 2A DO214AA
TVS DIODE 6VWM 10.3VC DO215AA
DIODE ZENER 4.7V 500MW SOD123
SFERNICE POTENTIOMETERS & TRIMME
IGBT MOD 600V 200A 500W SOT227B
Product Specifications：
MfrPart.: SIR696DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 125V 60A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: ThunderFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 125 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10VRdsOn(Max)@IdVgs: 11.5mOhm @ 20A, 10VVgs(th)(Max)@Id: 4.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 38 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1410 pF @ 75 VFETFeature: -PowerDissipation(Max): 104W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR696DP-T1-GE3 | Vishay | NHE Electronics
SIR696DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
