Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR866DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 60A PPAK SO-8
Product Attributes:
Part Number: SIR866DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 20V 60A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR866DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 6.8MH 130MA 15 OHM TH
MOSFET 2P-CH 20V 4.1A 8TSSOP
SFERNICE POTENTIOMETERS & TRIMME
BRIDGE RECT 1PHASE 1KV 3A GBU
DIODE SCHOTTKY 80V 3.9A TO277A
Product Specifications:
MfrPart.: SIR866DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 20V 60A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 1.9mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.3V @ 250µAGateCharge(Qg)(Max)@Vgs: 107 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 4730 pF @ 10 VFETFeature: -PowerDissipation(Max): 5.4W (Ta), 83W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR866DP-T1-GE3 | Vishay | NHE Electronics
SIR866DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.