Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR870BDP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 18.8A/81A PPAK
Product Attributes：
Part Number: SIR870BDP-T1-RE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR870BDP-T1-RE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 3.9UH 870MA 155MOHM TH
MOSFET P-CH 200V 1.8A D2PAK
FIXED IND 1UH 385MA 300 MOHM TH
DIODE GEN PURP 200V 1A MPG06
ADJ PWR RES 470M OHM 280W CHAS
Product Specifications：
MfrPart.: SIR870BDP-T1-RE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 18.8A/81A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 18.8A (Ta), 81A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 6.1mOhm @ 15A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 110 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 4870 pF @ 50 VFETFeature: -PowerDissipation(Max): 5.4W (Ta), 100W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR870BDP-T1-RE3 | Vishay | NHE Electronics
SIR870BDP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
