Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR870DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 60A PPAK SO-8
Product Attributes:
Part Number: SIR870DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 60A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR870DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 47UH 183MA 2.1 OHM SMD
DIODE ZENER 17.3V 600MW DO220AA
DIODE GEN PURP 200V 85A DO203AB
SENSOR REMOTE REC 36.0KHZ 45M
DIODE ZENER 36V 500MW SOD123
DIODE SCHOTTKY 60V 3A DO214AB
Product Specifications:
MfrPart.: SIR870DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 60A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 6mOhm @ 20A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 84 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2840 pF @ 50 VFETFeature: -PowerDissipation(Max): 6.25W (Ta), 104W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR870DP-T1-GE3 | Vishay | NHE Electronics
SIR870DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.