Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR880ADP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 80V 60A PPAK SO-8
Product Attributes：
Part Number: SIR880ADP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 80V 60A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR880ADP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 21.8VWM 39.1VC MPG06
DIODE AVALANCHE 1.6KV 1.5A
IC GATE DRVR HALF-BRIDGE 16TSSOP
FIXED IND 470NH 6.73A 21.75MOHM
TVS DIODE 85VWM 137VC DO214AB
Product Specifications：
MfrPart.: SIR880ADP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 80V 60A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 6.3mOhm @ 20A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 72 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2289 pF @ 40 VFETFeature: -PowerDissipation(Max): 5.4W (Ta), 83W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR880ADP-T1-GE3 | Vishay | NHE Electronics
SIR880ADP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
