Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIRA04DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 40A PPAK SO-8
Product Attributes：
Part Number: SIRA04DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 40A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIRA04DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 17V 350MW SOT23-3
SFERNICE POTENTIOMETERS & TRIMME
POT 10K OHM 8W WIREWOUND LINEAR
TVS DIODE 43VWM 70.8VC SOD57
MODULE DIODE SCR 250A MAGN-A-PAK
Product Specifications：
MfrPart.: SIRA04DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 40A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 40A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 2.15mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 77 nC @ 10 VVgs(Max): +20V, -16VInputCapacitance(Ciss)(Max)@Vds: 3595 pF @ 15 VFETFeature: -PowerDissipation(Max): 5W (Ta), 62.5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIRA04DP-T1-GE3 | Vishay | NHE Electronics
SIRA04DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
