Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIRA18BDP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 19A/40A PPAK SO8
Product Attributes：
Part Number: SIRA18BDP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIRA18BDP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE SCHOTTKY 100V 8A TO277A
FIXED IND 470NH 450MA 500MOHM SM
DIODE ZENER 11V 300MW SOT23-3
DIODE ZENER 9.1V 500MW MICROMELF
TVS DIODE 12.8VWM 21.2VC DO214AC
MODULE THYRISTOR 75A ADD-A-PAK
Product Specifications：
MfrPart.: SIRA18BDP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 19A/40A PPAK SO8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 19A (Ta), 40A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 6.83mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 19 nC @ 10 VVgs(Max): +20V, -16VInputCapacitance(Ciss)(Max)@Vds: 680 pF @ 15 VFETFeature: -PowerDissipation(Max): 3.8W (Ta), 17W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIRA18BDP-T1-GE3 | Vishay | NHE Electronics
SIRA18BDP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
