Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIRA50ADP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 54.8A/219A PPAK
Product Attributes：
Part Number: SIRA50ADP-T1-RE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 54.8A/219A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIRA50ADP-T1-RE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 9VWM 15.4VC DO214AA
IC SWITCH DUAL SPST 8SOIC
TVS DIODE 28VWM 50VC DO214AC
POT CONDUCTIVE PLASTIC ELEMENT
OPTOISOLATOR 5.3KV TRANS 4DIP
Product Specifications：
MfrPart.: SIRA50ADP-T1-RE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 54.8A/219A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 54.8A (Ta), 219A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 1.04mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 150 nC @ 10 VVgs(Max): +20V, -16VInputCapacitance(Ciss)(Max)@Vds: 7300 pF @ 20 VFETFeature: -PowerDissipation(Max): 6.25W (Ta), 100W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIRA50ADP-T1-RE3 | Vishay | NHE Electronics
SIRA50ADP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
