Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIS456DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 35A PPAK 1212-8
Product Attributes：
Part Number: SIS456DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIS456DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ARRAY SCHOTTKY 60V TO263AC
DIODE SCHOTTKY 40V 3.5A DPAK
DIODE GEN PURP 150V 8A TO263AB
TVS DIODE 13.6VWM 22.5VC GL41
DIODE ZENER 5.6V 300MW SOT23
NTC LUG02 10K 1% 3435K E4 PEEK A
Product Specifications：
MfrPart.: SIS456DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 35A PPAK 1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 5.1mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 55 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1800 pF @ 15 VFETFeature: -PowerDissipation(Max): 3.8W (Ta), 52W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SIS456DN-T1-GE3 | Vishay | NHE Electronics
SIS456DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
