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SIS606BDN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 9.4A/35.3A PPAK
Product Attributes：
Part Number: SIS606BDN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIS606BDN-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIS606BDN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 9.4A/35.3A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 9.4A (Ta), 35.3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10VRdsOn(Max)@IdVgs: 17.4mOhm @ 10A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 30 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1470 pF @ 50 VFETFeature: -PowerDissipation(Max): 3.7W (Ta), 52W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SIS606BDN-T1-GE3 | Vishay | NHE Electronics
SIS606BDN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
