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SIS612EDNT-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 50A PPAK1212-8S
Product Attributes：
Part Number: SIS612EDNT-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 20V 50A PPAK1212-8S
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIS612EDNT-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIS612EDNT-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 20V 50A PPAK1212-8SProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 50A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5VRdsOn(Max)@IdVgs: 3.9mOhm @ 14A, 4.5VVgs(th)(Max)@Id: 1.2V @ 1mAGateCharge(Qg)(Max)@Vgs: 70 nC @ 10 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 2060 pF @ 10 VFETFeature: -PowerDissipation(Max): 3.7W (Ta), 52W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SSIS612EDNT-T1-GE3 | Vishay | NHE Electronics
SIS612EDNT-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
