Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIS862DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 40A PPAK1212-8
Product Attributes：
Part Number: SIS862DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 40A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIS862DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
OPTOISOLATOR 5.3KV TRANS 6DIP
FIXED IND 1.5UH 11A 13.3 MOHM
TVS DIODE 17VWM 30.5VC DO220AA
DIODE ZENER 4.3V 1.25W DO214AC
DIODE GEN PURP 600V 15A D-PAK
TVS DIODE 14.5VWM 26.5VC DO214AC
Product Specifications：
MfrPart.: SIS862DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 40A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 40A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 8.5mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.6V @ 250µAGateCharge(Qg)(Max)@Vgs: 32 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1320 pF @ 30 VFETFeature: -PowerDissipation(Max): 3.7W (Ta), 52W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SIS862DN-T1-GE3 | Vishay | NHE Electronics
SIS862DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
