Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SISA40DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 43.7A/162A PPAK
Product Attributes：
Part Number: SISA40DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 20V 43.7A/162A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISA40DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 3.9MH 160MA 20.74 OHM
IC MUX CMOS SINGLE 8CH 16-SOIC
FIXED IND 10MH 100MA 23.4 OHM TH
TVS DIODE 10.2VWM 16.7VC DO214AC
TVS DIODE 23.1VWM 37.5VC DO204AL
Product Specifications：
MfrPart.: SISA40DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 20V 43.7A/162A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 43.7A (Ta), 162A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 10VRdsOn(Max)@IdVgs: 1.1mOhm @ 10A, 10VVgs(th)(Max)@Id: 1.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 53 nC @ 10 VVgs(Max): +12V, -8VInputCapacitance(Ciss)(Max)@Vds: 3415 pF @ 10 VFETFeature: -PowerDissipation(Max): 3.7W (Ta), 52W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SISA40DN-T1-GE3 | Vishay | NHE Electronics
SISA40DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
