Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SISC06DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 27.6A/40A PPAK
Product Attributes：
Part Number: SISC06DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 27.6A/40A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISC06DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 10VWM 17VC DO214AC
DIODE ZENER 5.1V 500MW SOD80
DIODE ZENER 38V 600MW DO220AA
TVS DIODE 30.8VWM 49.9VC 1.5KE
THERMISTOR NTC 47KOHM 4090K BEAD
DIODE ZENER 3V 500MW SOD123
Product Specifications：
MfrPart.: SISC06DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 27.6A/40A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 27.6A (Ta), 40A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 2.7mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.1V @ 250µAGateCharge(Qg)(Max)@Vgs: 58 nC @ 10 VVgs(Max): +20V, -16VInputCapacitance(Ciss)(Max)@Vds: 2455 pF @ 15 VFETFeature: -PowerDissipation(Max): 3.7W (Ta), 46.3W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SISC06DN-T1-GE3 | Vishay | NHE Electronics
SISC06DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
