Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SISH434DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 17.6A/35A PPAK
Product Attributes：
Part Number: SISH434DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 17.6A/35A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISH434DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
OPTOISOLATOR 5.3KV TRANS 4SMD
BRIDGE RECT 1PHASE 200V 3A GBL
TVS DIODE 136VWM 219VC DO214AA
SENSOR REMOTE REC 40.0KHZ 40M
Product Specifications：
MfrPart.: SISH434DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 17.6A/35A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 17.6A (Ta), 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 7.6mOhm @ 16.2A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 40 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1530 pF @ 20 VFETFeature: -PowerDissipation(Max): 3.8W (Ta), 52W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SHSISH434DN-T1-GE3 | Vishay | NHE Electronics
SISH434DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
