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SISH617DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 13.9A/35A PPAK
Product Attributes：
Part Number: SISH617DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 13.9A/35A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISH617DN-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SISH617DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 13.9A/35A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 13.9A (Ta), 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 12.3mOhm @ 13.9A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 59 nC @ 10 VVgs(Max): ±25VInputCapacitance(Ciss)(Max)@Vds: 1800 pF @ 15 VFETFeature: -PowerDissipation(Max): 3.7W (Ta), 52W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SHSISH617DN-T1-GE3 | Vishay | NHE Electronics
SISH617DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
