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    SISS10ADN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 31.7A/109A PPAK
    SISS10ADN-T1-GE3 Images
    SISS10ADN-T1-GE3 Images
    Product Attributes：
  • Part Number: SISS10ADN-T1-GE3
  • Manufacturer: Vishay
  • Description: MOSFET N-CH 40V 31.7A/109A PPAK
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • SISS10ADN-T1-GE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SISS10ADN-T1-GE3
  • Mfr: Vishay Siliconix
  • Description: MOSFET N-CH 40V 31.7A/109A PPAK
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET® Gen IV
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 40 V
  • Current-ContinuousDrain(Id)@25°C: 31.7A (Ta), 109A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
  • RdsOn(Max)@IdVgs: 2.65mOhm @ 15A, 10V
  • Vgs(th)(Max)@Id: 2.4V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 61 nC @ 10 V
  • Vgs(Max): +20V, -16V
  • InputCapacitance(Ciss)(Max)@Vds: 3030 pF @ 20 V
  • FETFeature: -
  • PowerDissipation(Max): 4.8W (Ta), 56.8W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PowerPAK® 1212-8S
  • SISS10ADN-T1-GE3 | Vishay | NHE Electronics
    • SISS10ADN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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