Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SISS26LDN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 23.7A/81.2A PPAK
Product Attributes：
Part Number: SISS26LDN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 23.7A/81.2A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS26LDN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 200V 5A DO214AB
IC ANALOG SWITCH CMOS 8SOIC
TVS DIODE 171VWM 274VC DO214AC
DIODE GEN PURP 200V 16A DO203AA
TVS DIODE 13.6VWM 22.5VC SMC
FIXED IND 680NH 450MA 480MOHM SM
Product Specifications：
MfrPart.: SISS26LDN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 23.7A/81.2A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 23.7A (Ta), 81.2A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 4.3mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 48 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1980 pF @ 30 VFETFeature: -PowerDissipation(Max): 4.8W (Ta), 57W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SSISS26LDN-T1-GE3 | Vishay | NHE Electronics
SISS26LDN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
