Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SISS30LDN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 80V 16A/55.5A PPAK
Product Attributes：
Part Number: SISS30LDN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 80V 16A/55.5A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS30LDN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 60V 500MW DO35
DIODE ZENER 35V 600MW DO220AA
IC SWITCH 2XSPST 8 OHM 8MINIQFN
DIODE ZENER 10V 200MW SOD323
DIODE SCHOTTKY 35V 6A TO263AB
Product Specifications：
MfrPart.: SISS30LDN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 80V 16A/55.5A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 16A (Ta), 55.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 8.5mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 50 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2070 pF @ 40 VFETFeature: -PowerDissipation(Max): 4.8W (Ta), 57W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SSISS30LDN-T1-GE3 | Vishay | NHE Electronics
SISS30LDN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
