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SISS63DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 35.1/127.5A PPAK
Product Attributes：
Part Number: SISS63DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 35.1/127.5A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS63DN-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SISS63DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 35.1/127.5A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IIIPartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 35.1A (Ta), 127.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 10VRdsOn(Max)@IdVgs: 2.7mOhm @ 15A, 10VVgs(th)(Max)@Id: 1.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 236 nC @ 8 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 7080 pF @ 10 VFETFeature: -PowerDissipation(Max): 5W (Ta), 65.8W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SSISS63DN-T1-GE3 | Vishay | NHE Electronics
SISS63DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
