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SISS70DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 125V 8.5A/31A PPAK
Product Attributes：
Part Number: SISS70DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 125V 8.5A/31A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS70DN-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SISS70DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 125V 8.5A/31A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 125 VCurrent-ContinuousDrain(Id)@25°C: 8.5A (Ta), 31A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 29.8mOhm @ 8.5A, 10VVgs(th)(Max)@Id: 4.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 15.3 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 535 pF @ 62.5 VFETFeature: -PowerDissipation(Max): 5.1W (Ta), 65.8W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SSISS70DN-T1-GE3 | Vishay | NHE Electronics
SISS70DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
