Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SISS76LDN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 70V 19.6A/67.4A PPAK
Product Attributes：
Part Number: SISS76LDN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS76LDN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 75VWM 121VC DO214AC
FIXED IND 560NH 5.5A 19.4MOHM SM
SENSOR REMOTE REC 56.0KHZ 40M
MOSFET 2N-CH 30V 5.3A 8-SOIC
DIODE ZENER 11V 1.5W DO214AA
TVS DIODE 5VWM 9.2VC DO214AA
Product Specifications：
MfrPart.: SISS76LDN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 70V 19.6A/67.4A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 70 VCurrent-ContinuousDrain(Id)@25°C: 19.6A (Ta), 67.4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 3.3V, 4.5VRdsOn(Max)@IdVgs: 6.25mOhm @ 10A, 4.5VVgs(th)(Max)@Id: 1.6V @ 250µAGateCharge(Qg)(Max)@Vgs: 33.5 nC @ 4.5 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 2780 pF @ 35 VFETFeature: -PowerDissipation(Max): 4.8W (Ta), 57W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SHSISS76LDN-T1-GE3 | Vishay | NHE Electronics
SISS76LDN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
