Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SISS98DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 200V 14.1A PPAK
Product Attributes：
Part Number: SISS98DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 200V 14.1A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS98DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
SFERNICE POTENTIOMETERS & TRIMME
BRIDGE RECT 1PHASE 600V 25A GBPC
DIODE SCHOTTKY 80V 120A D-67
DIODE GEN PURP 200V 250MA SOD123
SFERNICE POTENTIOMETERS & TRIMME
Product Specifications：
MfrPart.: SISS98DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 200V 14.1A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: ThunderFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 200 VCurrent-ContinuousDrain(Id)@25°C: 14.1A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10VRdsOn(Max)@IdVgs: 105mOhm @ 7A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 14 nC @ 7.5 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 608 pF @ 100 VFETFeature: -PowerDissipation(Max): 57W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SISS98DN-T1-GE3 | Vishay | NHE Electronics
SISS98DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
