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    SIZ998BDT-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, DUAL N-CHANNEL 30-V (D-S) MOSFET
    SIZ998BDT-T1-GE3 Images
    SIZ998BDT-T1-GE3 Images
    Product Attributes：
  • Part Number: SIZ998BDT-T1-GE3
  • Manufacturer: Vishay
  • Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • SIZ998BDT-T1-GE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SIZ998BDT-T1-GE3
  • Mfr: Vishay Siliconix
  • Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET® Gen IV
  • PartStatus: Active
  • FETType: 2 N-Channel (Dual), Schottky
  • FETFeature: Standard
  • DraintoSourceVoltage(Vdss): 30V
  • Current-ContinuousDrain(Id)@25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
  • RdsOn(Max)@IdVgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
  • Vgs(th)(Max)@Id: 2.2V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 18nC @ 10V, 46.7nC @ 10V
  • InputCapacitance(Ciss)(Max)@Vds: 790pF @ 15V, 2130pF @ 15V
  • Power-Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 8-PowerWDFN
  • SIZ998BDT-T1-GE3 | Vishay | NHE Electronics
    • SIZ998BDT-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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