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SQ2301ES-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 3.9A TO236
Product Attributes:
Part Number: SQ2301ES-T1_GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 3.9A TO236
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQ2301ES-T1_GE3 Datasheet (PDF)
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Product Specifications:
MfrPart.: SQ2301ES-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 3.9A TO236Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 3.9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5VRdsOn(Max)@IdVgs: 120mOhm @ 2.8A, 4.5VVgs(th)(Max)@Id: 1.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 8 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 425 pF @ 10 VFETFeature: -PowerDissipation(Max): 3W (Tc)OperatingTemperature: -55°C ~ 175°C (TA)MountingType: Surface MountSupplierDevicePackage: TO-236 (SOT-23)SQ2301ES-T1_GE3 | Vishay | NHE Electronics
SQ2301ES-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.