Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQ2315ES-T1_BE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 12V 5A SOT23-3
Product Attributes：
Part Number: SQ2315ES-T1_BE3
Manufacturer: Vishay
Description: MOSFET P-CH 12V 5A SOT23-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQ2315ES-T1_BE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 45.4VWM 80.5VC 1.5KE
DIODE GEN PURP 100V 35A DO203AB
FIXED IND 3.9UH 344MA 590MOHM SM
TVS DIODE 18VWM 29.2VC DO214AC
TVS DIODE 16VWM 26VC DO220AA
DIODE GEN PURP 1KV 4A TO277A
Product Specifications：
MfrPart.: SQ2315ES-T1_BE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 12V 5A SOT23-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 12 VCurrent-ContinuousDrain(Id)@25°C: 5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 50mOhm @ 3.5A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 13 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 870 pF @ 6 VFETFeature: -PowerDissipation(Max): 2W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SQ2315ES-T1_BE3 | Vishay | NHE Electronics
SQ2315ES-T1_BE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
