Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQ2318BES-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 8A SOT23-3
Product Attributes:
Part Number: SQ2318BES-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 8A SOT23-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQ2318BES-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 1.2KV 16A TO263AB
THERMISTOR PTC 100 OHM RADIAL
FIXED IND 1.5UH 4.63A 17MOHM SMD
DIODE GEN 1.6KV 135A MAGNAPAK
MOSFET N-CH 600V 3.6A TO220AB
Product Specifications:
MfrPart.: SQ2318BES-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 8A SOT23-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 8A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 26.3mOhm @ 4A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 9.4 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 500 pF @ 25 VFETFeature: -PowerDissipation(Max): 3W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SQ2318BES-T1_GE3 | Vishay | NHE Electronics
SQ2318BES-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.