Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQ2325ES-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 150V 840MA TO236
Product Attributes：
Part Number: SQ2325ES-T1_GE3
Manufacturer: Vishay
Description: MOSFET P-CH 150V 840MA TO236
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQ2325ES-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 64VWM 103VC DO214AB
DIODE ZENER 3.3V 1.3W DO41
DIODE ZENER 12V 1W DO214AC
DIODE ZENER 3.3V 500MW SOD80
FIXED IND 5.6UH 335MA 720MOHM TH
DIODE GEN PURP 1KV 1A DO204AC
Product Specifications：
MfrPart.: SQ2325ES-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 150V 840MA TO236Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 150 VCurrent-ContinuousDrain(Id)@25°C: 840mA (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 1.77Ohm @ 500mA, 10VVgs(th)(Max)@Id: 3.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 10 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 250 pF @ 50 VFETFeature: -PowerDissipation(Max): 3W (Tc)OperatingTemperature: -55°C ~ 175°C (TA)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SQ2325ES-T1_GE3 | Vishay | NHE Electronics
SQ2325ES-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
