Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQ4425EY-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CHANNEL 30V 18A 8SOIC
Product Attributes：
Part Number: SQ4425EY-T1_GE3
Manufacturer: Vishay
Description: MOSFET P-CHANNEL 30V 18A 8SOIC
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQ4425EY-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 30.8VWM 49.9VC DO214AA
IC SWITCH DUAL LV 6MINIQFN
BRIDGE RECT 1PHASE 1KV 2A KBPM
BRIDGE RECT 3PHASE 1.4KV 60A MTK
NTC LUG M4 10K 2% G24 38MM A
Product Specifications：
MfrPart.: SQ4425EY-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET P-CHANNEL 30V 18A 8SOICProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 18A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 12mOhm @ 13A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 50 nC @ 4.5 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3630 pF @ 25 VFETFeature: -PowerDissipation(Max): 6.8W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSQ4425EY-T1_GE3 | Vishay | NHE Electronics
SQ4425EY-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
