Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQA442EJ-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 9A PPAK SC70-6
Product Attributes：
Part Number: SQA442EJ-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 9A PPAK SC70-6
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQA442EJ-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 75VWM 121VC DO215AB
TVS DIODE 18VWM 29.2VC DO218AB
TVS DIODE 136VWM 219VC DO214AA
DIODE GEN PURP 400V 1A DO204AL
DIODE GEN PURP 100V 1A DO220AA
Product Specifications：
MfrPart.: SQA442EJ-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 9A PPAK SC70-6Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 32mOhm @ 3A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 9.7 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 636 pF @ 25 VFETFeature: -PowerDissipation(Max): 13.6W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6SQA442EJ-T1_GE3 | Vishay | NHE Electronics
SQA442EJ-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
