Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQD23N06-31L_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 23A TO252
Product Attributes：
Part Number: SQD23N06-31L_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 23A TO252
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQD23N06-31L_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
MOSFET 2N-CH 30V 4.9A 1212-8
ADJ PWR RES 330 OHM 280W CHAS MT
INTEGRATED POWER STAGE POWERPAK
DIODE GEN PURP 800V 40A DO203AB
DIODE ARRAY GP 100V 5A TO220AB
Product Specifications：
MfrPart.: SQD23N06-31L_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 23A TO252Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 23A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 31mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 24 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 845 pF @ 25 VFETFeature: -PowerDissipation(Max): 37W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: TO-252, (D-Pak)SQD23N06-31L_GE3 | Vishay | NHE Electronics
SQD23N06-31L_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
