Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJ136ELP-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 350A PPAK SO-8
Product Attributes:
Part Number: SQJ136ELP-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 350A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJ136ELP-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 26.8VWM 47.7VC MPG06
DIODE SCHOTTKY 60V 2A DO220AA
DIODE ARRAY GP 600V 4A TO263AB
SFERNICE POTENTIOMETERS & TRIMME
SFERNICE POTENTIOMETERS & TRIMME
TVS DIODE 58.1VWM 92VC DO214AC
Product Specifications:
MfrPart.: SQJ136ELP-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 350A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 350A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): -RdsOn(Max)@IdVgs: 1.12mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 150 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 8015 pF @ 25 VFETFeature: -PowerDissipation(Max): 500W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SQJ136ELP-T1_GE3 | Vishay | NHE Electronics
SQJ136ELP-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.