Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJ410EP-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 32A PPAK SO-8
Product Attributes：
Part Number: SQJ410EP-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 32A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJ410EP-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 8.2UH 540MA 440MOHM TH
DIODE GEN PURP 300V 8A TO263AB
TVS DIODE 28.2VWM 45.7VC 1.5KE
TVS DIODE 15.3VWM 25.2VC DO214AB
IC REG DL BUCK/LNR SYNC MLP55-32
TVS DIODE 8.55VWM 14.5VC DO214AC
Product Specifications：
MfrPart.: SQJ410EP-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 32A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 32A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 3.9mOhm @ 10.3A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 110 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 6210 pF @ 15 VFETFeature: -PowerDissipation(Max): 83W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SQJ410EP-T1_GE3 | Vishay | NHE Electronics
SQJ410EP-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
