Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJ446EP-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 60A PPAK SO-8
Product Attributes:
Part Number: SQJ446EP-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 60A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJ446EP-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 30VWM 48.4VC DO214AB
TVS DIODE 10.2VWM 16.7VC DO214AC
TVS DIODE 64.1VWM 103VC DO204AL
FIXED IND 8.2UH 360MA 600MOHM TH
DIODE ZENER 39V 1.25W DO214AC
TVS DIODE 5VWM 9.2VC DO214AC
Product Specifications:
MfrPart.: SQJ446EP-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 60A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 5mOhm @ 14A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 65 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 4220 pF @ 20 VFETFeature: -PowerDissipation(Max): 46W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SQJ446EP-T1_GE3 | Vishay | NHE Electronics
SQJ446EP-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.