Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJ850EP-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 24A PPAK SO-8
Product Attributes:
Part Number: SQJ850EP-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 24A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJ850EP-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
BRIDGE RECT 1PHASE 400V 2A D-44
DIODE SCHOTTKY 60V 4.3A TO277A
THERMISTOR NTC 10KOHM 3977K BEAD
FIXED IND 4.7UH 5.5A 37.11 MOHM
TVS DIODE 120VWM 193VC DO214AA
TVS DIODE 7VWM 12VC DO204AC
Product Specifications:
MfrPart.: SQJ850EP-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 24A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 24A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 23mOhm @ 10.3A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 30 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1225 pF @ 30 VFETFeature: -PowerDissipation(Max): 45W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SQJ850EP-T1_GE3 | Vishay | NHE Electronics
SQJ850EP-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.