Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJA04EP-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 75A PPAK SO-8
Product Attributes:
Part Number: SQJA04EP-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 75A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJA04EP-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 5.1V 1W DO213AB
FIXED IND 15MH 800MA 3.39 OHM TH
THERM NTC 330KOHM 4247K 0603
DIODE SCHOTTKY 30V DO219-M
SCR DBL 2SCR 800V 60A ADD-A-PAK
DIODE GEN PURP 600V 1A DO204AC
Product Specifications:
MfrPart.: SQJA04EP-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 75A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 75A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 6.2mOhm @ 10A, 10VVgs(th)(Max)@Id: 3.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 55 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3500 pF @ 25 VFETFeature: -PowerDissipation(Max): 68W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SQJA04EP-T1_GE3 | Vishay | NHE Electronics
SQJA04EP-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.