Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJA62EP-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 60A PPAK SO-8
Product Attributes：
Part Number: SQJA62EP-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 60A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJA62EP-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 33V 300MW SOT23-3
DIODE ZENER 22V 1W DO214AC
SFERNICE POTENTIOMETERS & TRIMME
DIODE SCHOTTKY 20A 100V TO-263AB
DIODE ZENER 33V 1.25W DO214AC
SENSOR REMOTE REC 36.0KHZ 45M
Product Specifications：
MfrPart.: SQJA62EP-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 60A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 4.5mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 85 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 5100 pF @ 25 VFETFeature: -PowerDissipation(Max): 68W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SQJA62EP-T1_GE3 | Vishay | NHE Electronics
SQJA62EP-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
