Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJA82EP-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 80V 60A PPAK SO-8
Product Attributes：
Part Number: SQJA82EP-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 80V 60A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJA82EP-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 180NH 2.4A 35 MOHM TH
THERMISTOR PTC 2.7KOHM 0.5% 1206
TVS DIODE 3VWM 8.7VC SOD523
TVS DIODE 6.5VWM 14.5VC DO221AC
FIXED IND 6.8UH 204MA 1.8OHM SMD
TVS DIODE 6VWM 10.3VC P600
Product Specifications：
MfrPart.: SQJA82EP-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 80V 60A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 8.2mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 60 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3000 pF @ 25 VFETFeature: -PowerDissipation(Max): 68W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SQJA82EP-T1_GE3 | Vishay | NHE Electronics
SQJA82EP-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
