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SQJQ112E-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, AUTOMOTIVE N-CHANNEL 100 V (D-S)
Product Attributes：
Part Number: SQJQ112E-T1_GE3
Manufacturer: Vishay
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJQ112E-T1_GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SQJQ112E-T1_GE3Mfr: Vishay SiliconixDescription: AUTOMOTIVE N-CHANNEL 100 V (D-S)Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 296A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 2.53mOhm @ 20A, 10VVgs(th)(Max)@Id: 3.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 272 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 15945 pF @ 25 VFETFeature: -PowerDissipation(Max): 600W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 8 x 8SQJQ112E-T1_GE3 | Vishay | NHE Electronics
SQJQ112E-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
