Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJQ402E-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 200A PPAK 8 X 8
Product Attributes：
Part Number: SQJQ402E-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJQ402E-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 600V 1.5A DO220AA
OPTOISOLATOR 5.3KV TRANS 4SMD
OPTOISO 5.3KV PHVOLT 8DIP
DIODE SCHOTTKY 50V 100A TO244
Product Specifications：
MfrPart.: SQJQ402E-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 200A PPAK 8 X 8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 200A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 1.7mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 260 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 13500 pF @ 20 VFETFeature: -PowerDissipation(Max): 150W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 8 x 8SQJQ402E-T1_GE3 | Vishay | NHE Electronics
SQJQ402E-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
