Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQS407ENW-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 16A PPAK1212-8W
Product Attributes：
Part Number: SQS407ENW-T1_GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 16A PPAK1212-8W
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQS407ENW-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 16.2VWM 29.1VC DO214AB
TVS DIODE 170VWM 304VC DO204AC
MOSFET N-CH 600V 13A TO252AA
TVS DIODE 10VWM 17VC DO214AB
DIODE ZENER 9.1V 300MW SOT23
OPTOISOLTR 5.3KV PWR TRIAC 8DIP
Product Specifications：
MfrPart.: SQS407ENW-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 16A PPAK1212-8WProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 16A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 10.8mOhm @ 12A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 77 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 4572 pF @ 20 VFETFeature: -PowerDissipation(Max): 62.5W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8WSQS407ENW-T1_GE3 | Vishay | NHE Electronics
SQS407ENW-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
