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SQS481ENW-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 150V 4.7A PPAK1212-8
Product Attributes：
Part Number: SQS481ENW-T1_GE3
Manufacturer: Vishay
Description: MOSFET P-CH 150V 4.7A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQS481ENW-T1_GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SQS481ENW-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 150V 4.7A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 150 VCurrent-ContinuousDrain(Id)@25°C: 4.7A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 1.095Ohm @ 5A, 10VVgs(th)(Max)@Id: 3.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 11 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 385 pF @ 75 VFETFeature: -PowerDissipation(Max): 62.5W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SQS481ENW-T1_GE3 | Vishay | NHE Electronics
SQS481ENW-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
