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SQS482ENW-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 16A PPAK1212-8W
Product Attributes：
Part Number: SQS482ENW-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 16A PPAK1212-8W
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQS482ENW-T1_GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SQS482ENW-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 16A PPAK1212-8WProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 16A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 8.5mOhm @ 16.4A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 39 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1865 pF @ 25 VFETFeature: -PowerDissipation(Max): 62W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8WSQS482ENW-T1_GE3 | Vishay | NHE Electronics
SQS482ENW-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
