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    SQS966ENW-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET N-CHAN 60V
    SQS966ENW-T1_GE3 Images
    SQS966ENW-T1_GE3 Images
    Product Attributes：
  • Part Number: SQS966ENW-T1_GE3
  • Manufacturer: Vishay
  • Description: MOSFET N-CHAN 60V
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • SQS966ENW-T1_GE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SQS966ENW-T1_GE3
  • Mfr: Vishay Siliconix
  • Description: MOSFET N-CHAN 60V
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: Automotive, AEC-Q101, TrenchFET®
  • PartStatus: Active
  • FETType: 2 N-Channel (Dual)
  • FETFeature: Standard
  • DraintoSourceVoltage(Vdss): 60V
  • Current-ContinuousDrain(Id)@25°C: 6A (Tc)
  • RdsOn(Max)@IdVgs: 36mOhm @ 1.25A, 10V
  • Vgs(th)(Max)@Id: 2.5V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 8.8nC @ 10V
  • InputCapacitance(Ciss)(Max)@Vds: 572pF @ 25V
  • Power-Max: 27.8W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount, Wettable Flank
  • Package/Case: PowerPAK® 1212-8W Dual
  • SQS966ENW-T1_GE3 | Vishay | NHE Electronics
    • SQS966ENW-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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