Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQV120N06-4M7L_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 120A TO262-3
SQV120N06-4M7L_GE3 Images
Product Attributes：
Part Number: SQV120N06-4M7L_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 120A TO262-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQV120N06-4M7L_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
LED GREEN DIFFUSED T-1 3/4 T/H
TVS DIODE 5VWM 9.2VC DO214AB
TVS DIODE 18VWM 29.2VC DO214AA
DIODE SCHOTTKY 100V 12A TO277A
DIODE SCHOTTKY 100V 2A DO220AA
Product Specifications：
MfrPart.: SQV120N06-4M7L_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 120A TO262-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 120A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 4.7mOhm @ 30A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 230 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 8800 pF @ 25 VFETFeature: -PowerDissipation(Max): 250W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: -SQV120N06-4M7L_GE3 | Vishay | NHE Electronics
SQV120N06-4M7L_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
